Optimized graphene electrodes for contacting graphene nanoribbons

Atomically precise graphene nanoribbons (GNRs) are a promising emerging class of designer quantum materials with electronic properties that tunable by chemical design. However, many challenges remain in the device integration these materials, especially regarding contacting strategies. We report on uniaxially aligned and non-aligned 9-atom wide armchair (9-AGNRs) field-effect transistor geometry using electron beam lithography-defined electrodes. This approach yields controlled electrode geometries enables higher fabrication throughput compared to previous approaches an electrical breakdown technique. Thermal annealing is found be crucial step for successful operation resulting transport characteristics showing strong gate dependence. Raman spectroscopy confirms integrity electrodes after patterning GNRs integration. Our results demonstrate importance GNR-graphene interface pave way GNR structurally well-defined